plastic medium power silicon pnp transistor . . . designed for use in 5.0 to 10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ? dc current gain e h fe = 40 (min) @ i c = 0.15 adc ? bd180 is complementary with bd179 ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? rating ????? ????? symbol ?????? ?????? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ????? ????? v ceo ?????? ?????? 80 ??? ??? vdc ???????????? ???????????? collectorbase voltage ????? ????? v cbo ?????? ?????? 80 ??? ??? vdc ???????????? ???????????? emitterbase voltage ????? ????? v ebo ?????? ?????? 5.0 ??? ??? vdc ???????????? ???????????? collector current ????? ????? i c ?????? ?????? 3.0 ??? ??? adc ???????????? ???????????? base current ????? ????? i b ?????? ?????? 1.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ?????? ? ???? ? ?????? 30 240 ??? ? ? ? ??? watts mw/ c ???????????? ???????????? operating and storage junction temperature range ????? ????? t j , t stg ?????? ?????? 65 to +150 ??? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? q jc ?????? ?????? 4.16 ??? ??? c/w ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ????? ????? min ???? ???? max ???? ???? unit ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage* (i c = 0.1 adc, i b = 0) ????? ? ??? ? ????? v (br)ceo ????? ? ??? ? ????? 80 ???? ? ?? ? ???? e ???? ? ?? ? ???? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v cb = 45 vdc, i e = 0) (v cb = 80 vdc, i e = 0) bd180 ????? ? ??? ? ????? i cbo ????? ? ??? ? ????? e e ???? ? ?? ? ???? e 1.0 ???? ? ?? ? ???? madc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ????? ? ??? ? ????? e ???? ? ?? ? ???? 1.0 ???? ? ?? ? ???? madc ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 0.15 a, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) ????? ? ??? ? ????? h fe ????? ? ??? ? ????? 40 15 ???? ? ?? ? ???? 250 e ???? ? ?? ? ???? e ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage* (i c = 1.0 adc, i b = 0.1 adc) ????? ? ??? ? ????? v ce(sat) ????? ? ??? ? ????? e ???? ? ?? ? ???? 0.8 ???? ? ?? ? ???? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter on voltage* (i c = 1.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ????? v be(on) ????? ? ??? ? ????? e ???? ? ?? ? ???? 1.3 ???? ? ?? ? ???? vdc ??????????????????? ? ????????????????? ? ??????????????????? currentgain e bandwidth product (i c = 250 madc, v ce = 10 vdc, f = 1.0 mhz) ????? ? ??? ? ????? f t ????? ? ??? ? ????? 3.0 ???? ? ?? ? ???? e ???? ? ?? ? ???? mhz *pulse test: pulse width 300 m s, duty cycle 2.0%. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 10 1 publication order number: bd180/d bd180 3.0 amperes power transistor pnp silicon 80 volts 30 watts case 7709 to225aa type 3 2 1 style 1: pin 1. emitter 2. collector 3. base
bd180 http://onsemi.com 2 figure 1. active region safe operating area 10 2.0 v ce , collector-emitter voltage (volts) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 3.0 5.0 7.0 10 20 30 50 10 0 secondary breakdown limitation thermal limitation (baseemitter dissipation is significant above i c = 20 amp) pulse duty cycle < 10% 70 0.3 0.2 i c , collector current (amp) t j = 150 c dc 5.0 ms 1.0 100 m s 1.0 ms bd180 the safe operating area curves indicate i c v ce limits below which the device will not enter secondary breakdown. collector load lines for specific circuits must fall within the applicable safe area to avoid causing a catastrophic failure. to insure operation below the maximum t j , powertemperature derating must be observed for both steady state and pulse power conditions. v ce , collector-emitter voltage (volts) figure 2. collector saturation region i b , base current (ma) 1.0 0 0.2 0.8 0.6 0.4 0.2 1.0 2.0 10 50 200 i c = 0.1 a 0.25 a 1.0 a 0.5 a 0.5 100 20 5.0 t j = 25 c h fe , dc current gain (normalized) 1000 figure 3. current gain i c , collector current (ma) 10 100 v ce = 2.0 v 700 500 300 200 70 50 30 20 3.0 5.0 10 20 30 50 2000 2.0 100 200 1000 300 500 t j = + 150 c t j = - 55 c t j = + 25 c figure 4. aono voltages 0 1.5 3.0 5.0 10 20 30 50 2000 2.0 100 200 1000 300 500 1.2 0.9 0.6 0.3 i c , collector current (ma) t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 voltage (volts) v be @ v ce = 2.0 v
bd180 http://onsemi.com 3 figure 5. thermal response t, time or pulse width (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 r(t), normalized effective transient thermal resistance 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000 500 q jc (t) = r(t) q jc q jc = 4.16 c/w max q jc = 3.5 c/w typ d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse d = 0.2 d = 0.1 d = 0.05 d = 0.01
bd180 http://onsemi.com 4 package dimensions case 7709 issue w to225aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. b a m k f c q h v g s d j r u 13 2 2 pl m a m 0.25 (0.010) b m m a m 0.25 (0.010) b m dim min max min max millimeters inches a 0.425 0.435 10.80 11.04 b 0.295 0.305 7.50 7.74 c 0.095 0.105 2.42 2.66 d 0.020 0.026 0.51 0.66 f 0.115 0.130 2.93 3.30 g 0.094 bsc 2.39 bsc h 0.050 0.095 1.27 2.41 j 0.015 0.025 0.39 0.63 k 0.575 0.655 14.61 16.63 m 5 typ 5 typ q 0.148 0.158 3.76 4.01 r 0.045 0.065 1.15 1.65 s 0.025 0.035 0.64 0.88 u 0.145 0.155 3.69 3.93 v 0.040 --- 1.02 --- style 1: pin 1. emitter 2. collector 3. base on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje3439/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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